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1

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Yamamoto, Hideki

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 454 KB

english, 2012

2

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Year:

2006

Language:

english

File:

PDF, 338 KB

english, 2006

3

Optical properties of AlxGa1−xAs/GaAs superlattice solar cells

Kuramoto, Makoto, Urabe, Hiroyuki, Nakano, Tomohiro, Kawaharazuka, Atsushi, Nishinaga, Jiro, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 585 KB

english, 2015

4

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Kobayashi, Yasuyuki, Kumakura, Kazuhide, Akasaka, Tetsuya, Makimoto, Toshiki

Journal:

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

5

High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 319 KB

1993

6

Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Yamada, Syoji, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

7

Flow-rate modulation epitaxy of GaAs and AlGaAs

Kobayashi, Naoki, Makimoto, Toshiki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.65 MB

english, 1989

8

RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

9

Al 2 O 3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hashizume, Tamotsu, Anantathanasarn, Sanguan, Negoro, Noboru, Sano, Eiichi, Hasegawa, Hideki, Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 134 KB

english, 2004

10

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 378 KB

english, 2003

11

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 504 KB

english, 2006

12

Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 660 KB

english, 2007

13

Growth of nonpolar AlN (1120) and (1100) films on SiC substrates by flow-rate modulation epitaxy

Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 411 KB

english, 2007

14

Field emission properties of heavily Si-doped AlN in triode-type display structure

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 301 KB

english, 2004

15

Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE

Makimoto, Toshiki, Saito, Hisao, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 342 KB

english, 1997

16

BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire

Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 340 KB

english, 2007

17

Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 373 KB

english, 2002

18

Carbon Atomic Layer Doping in AlGaAs by Metalorganic Chemical Vapor Deposition and Its Application to a P-Type Modulation Doped Structure

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 793 KB

1993

19

Ohmic Contact to p -GaN Using a Strained InGaN Contact Layer and Its Thermal Stability

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 121 KB

english, 2003

20

Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 245 KB

english, 1995

21

Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 53 KB

english, 2000

22

High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector

Kazuhide Kumakura, Atsushi Nishikawa, Toshiki Makimoto

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

23

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 322 KB

english, 1995

24

Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 468 KB

1996

25

Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

26

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

27

Analysis of electrical properties of insulators (Si3N4, SiO2, AlN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures

Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 210 KB

english, 2007

28

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Akasaka, Tetsuya, Gotoh, Hideki, Kobayashi, Yasuyuki, Nakano, Hidetoshi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

29

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm[sup 2] V[sup −1] s[sup −1])

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

30

Flow-Rate Modulation Epitaxy of GaAs

Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 472 KB

1985

31

High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p – i – n Vertical Conducting Diode on n -SiC Substrate

Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.10 MB

english, 2007

32

Low-Temperature Growth of MgB 2 Thin films with T c above 38 K

Ueda, Kenji, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 105 KB

english, 2006

33

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

34

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kumakura, Kazuhide

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 290 KB

english, 2004

35

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

Wang, Chengxin, Maeda, Narihiko, Tsubaki, Kotaro, Kobayashi, Naoki, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 192 KB

english, 2004

36

Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy

Thiru, Sathiabama, Asakawa, Masaki, Honda, Kazuki, Kawaharazuka, Atsushi, Tackeuchi, Atsushi, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.08 MB

english, 2015

37

Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa 2 Cu 3 O 7-δ Thin Films

Karimoto, Shin-ichi, Sato, Hisashi, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

38

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

39

Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3

Kazuhide Kumakura, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

40

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Ito, Hiroshi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 582 KB

english, 1991

41

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface

Toshiki Makimoto, Berinder Brar, Herbert Kroemer

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 349 KB

english, 1995

42

Hole conduction characteristics of cubic Ti 1−x Al x N

Yoshikawa, Masahiro, Toyama, Daiki, Fujita, Toshiaki, Nagatomo, Noriaki, Makimoto, Toshiki

Journal:

Thin Solid Films

Year:

2018

Language:

english

File:

PDF, 1.22 MB

english, 2018

43

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 164 KB

english, 1998

44

An InGaN-based horizontal-cavity surface-emitting laser diode

Akasaka, Tetsuya, Nishida, Toshio, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 502 KB

english, 2004

45

High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al[sub 2]O[sub 3]∕Si[sub 3]N[sub 4] gate insulator

Maeda, Narihiko, Wang, Chengxin, Enoki, Takatomo, Makimoto, Toshiki, Tawara, Takehiko

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 273 KB

english, 2005

46

Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy

Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 535 KB

1986

47

Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy

Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 530 KB

1986

48

In-Situ STM Observation of GaAs Surfaces after Nitridation

Makimoto, Toshiki, Kasu, Makoto, Benchimol, Jean L., Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 737 KB

1997

49

Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer and Si 3 N 4 Single Layer

Wang, Chengxin, Maeda, Narihiko, Hiroki, Masanobu, Tawara, Takehiko, Makimoto, Toshiki, Kobayashi, Takashi, Enoki, Takotomo

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 281 KB

english, 2005

50

Effects of surface barrier layer in AlGaAs/GaAs solar cells

Urabe, Hiroyuki, Kuramoto, Makoto, Nakano, Tomohiro, Kawaharazuka, Atsushi, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.10 MB

english, 2015

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